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512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
Commands
PRECHARGE
The PRECHARGE command is used to deactivate the open row in a particular bank or
the open row in all banks. The bank(s) will be available for a subsequent row access a
specified time ( t RP) after the PRECHARGE command is issued. Input A10 determines
whether one or all banks are to be precharged, and in the case where only one bank is
precharged, inputs BA0 and BA1 select the bank. Otherwise BA0 and BA1 are treated as
“Don’t Care.” After a bank has been precharged, it is in the idle state and must be acti-
vated prior to any READ or WRITE commands are issued to that bank.
Figure 11: PRECHARGE Command
CLK
CKE
HIGH
CS#
RAS#
CAS#
WE#
Address
All banks
A10
Bank selected
BA0, BA1
Bank address
Valid address
Don’t Care
BURST TERMINATE
The BURST TERMINATE command is used to truncate either fixed-length or continu-
ous page bursts. The most recently registered READ or WRITE command prior to the
BURST TERMINATE command is truncated.
AUTO REFRESH
AUTO REFRESH is used during normal operation and is analogous to CAS#-BEFORE-
RAS# (CBR) REFRESH in FPM/EDO DRAM. Addressing is generated by the internal re-
fresh controller. This makes the address bits “Don’t Care” during an AUTO REFRESH
command.
PDF: 09005aef8459c827
512mb_mobile_sdram_y67m_at.pdf – Rev. B 3/11 EN
31
Micron Technology, Inc. reserves the right to change products or specifications without notice.
? 2011 Micron Technology, Inc. All rights reserved.
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